发明名称 Transistor assembly and method of its fabrication
摘要 A transistor assembly with semiconductor material vertically introduced into micro holes (4) in a pliable a film laminate consisting of two plastic films (1, 3) with a metal layer (2) located therebetween. Said semiconductor material is provided with contacts (6, 7) by metalizing the top side and bottom side of the film laminate. The assembly is very strong by virtue of the fact that the film can be bent and stretched.
申请公布号 US7579281(B2) 申请公布日期 2009.08.25
申请号 US20060327218 申请日期 2006.01.09
申请人 HELMHOLTZ-ZENTRUM BERLIN FUER MATERIALIEN UND ENERGIE GMBH 发明人 KOENENKAMP ROLF;CHEN JIE
分类号 H01L21/28;H01L21/302;H01L21/00;H01L21/336;H01L21/338;H01L29/772;H01L29/786;H01L29/812;H01L51/30;H01L51/40 主分类号 H01L21/28
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