Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications

摘要

Embodiments of the present disclosure provide methods for etching a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one example, a method of patterning a metal layer on a substrate includes supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen containing gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate, and supplying a third gas mixture comprising an inert gas into the processing chamber to sputter clean the surface of the etched metal layer.

主权项

1. A method of patterning a metal layer on a substrate, comprising:
(a) supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen gas (H2) into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon; (b) supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate; and (c) supplying a third gas mixture comprising Ar gas or He gas into the processing chamber to sputter clean the surface of the etched metal layer.