| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for controlling a resistance change type memory.SOLUTION: A resistance change type memory performs operation so that the resistance change type memory has a specific state. Next, an operation period is started (S320). A first control signal having a first polarity is supplied during a first sub-period in the operation period (S330), and a second control signal having a second polarity is supplied during a second sub-period in the operation period (S340), and a third control signal having the first polarity is supplied during a third sub-period in the operation period (S350). A read-out signal is supplied during a fourth sub-period in the operation period and the resistance change type memory generates a read-out current (S360). According to the read-out current, a control circuit verifies whether the resistance change type memory is in the specific state (S380).SELECTED DRAWING: Figure 3A |
