MEMBRANE, MASK AND ALIGNER OR DEVICE FABRICATION SYSTEM EMPLOYING THEM

摘要

PROBLEM TO BE SOLVED: To obtain a membrane excellent in a surface state and transmittance as well as physical and mechanical strength by depositing SiC and SiCN preferably by sputtering and/or CVD. SOLUTION: A silicon substrate 1 is prepared and an SBR sputtering system is employed in a film deposition system and sintered SiC is prepared as a sputter gate along with pure argon gas and pure nitrogen gas as a sputter gas. Sputtering is performed at first while setting the ratio of flow rate between argon gas and nitrogen gas to 1:1 thus depositing SiCV 2. Sputtering is continued using 100% argon gas thus forming SiC 3. SiCN is then deposited again on the SiC. Subsequently, SiC 4 is deposited in a region except the rectangular part corresponding to the rear surface of silicon substrate 1. Si is then removed by etching from the back face of the substrate using the SiC as a mask thus forming a radiation transmitting part and a radiation absorbing film 5 is formed on the laminate.