发明名称 |
HIGH OUTPUT SEMICONDUCTOR LASER ELEMENT HAVING ROBUST ELECTRODE STRUCTURE |
摘要 |
<p>A high-output semiconductor laser element has one of a Cr/Pt/Au electrode and Cr/Ni/Au electrode as a P-type electrode to provide an electrode construction that is robust with respect to heat, high in reliability and stable for a long period of time. The P-type electrode is disposed on an N-type substrate via an epitaxial layer and defines a stripe 41 having a width of 100 .mu.m or more.</p> |
申请公布号 |
CA2186575(A1) |
申请公布日期 |
1997.04.06 |
申请号 |
CA19962186575 |
申请日期 |
1996.09.26 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
KIMURA, YUJI;ATSUMI, KINYA;ABE, KATSUNORI;TOYAMA, TETSUO |
分类号 |
H01S5/00;H01S5/042;(IPC1-7):H01S3/25 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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