METHOD OF MAKING SILICON CARBIDE JUNCTION DIODES,申请号USD3663722-传众专利搜索

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发明名称	METHOD OF MAKING SILICON CARBIDE JUNCTION DIODES
摘要
申请公布号	US3663722(A)	申请公布日期	1972.05.16
申请号	USD3663722	申请日期	1970.03.05
申请人	NORTON RESEARCH CORP.	发明人	G SANJIV KAMATH
分类号	C30B13/02;C30B19/04;H01L29/24;H01L33/00;(IPC1-7):H01L7/38;C01B31/36;B01J17/24	主分类号	C30B13/02
代理机构		代理人
主权项
地址

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