| 摘要 |
This invention is a multi-terminal Gunn-type semiconductor microwave generator capable of producing signals of stable frequency over a frequency range. In one form, a group III-V semiconductor chip having a varying cross-sectional area is mounted between a pair of contacts. The inner portion of the chip is appropriately doped to create a region of one type of conductivity and an outer shell portion of the chip is appropriately doped to create a region of opposite or different conductivity with a junction formed therebetween. A potential is applied across the pair of contacts to create an electric field gradient along the current axis of the device. A bias is applied through a third contact to the junction, which for the sake of discussion will be referred to as a P/N junction. The biased P/N junction creates a space-charge region that controls the length of the active region, whence the third terminal controls the frequency of the signal generated by the overall device. Numerous alternative embodiments of the invention are possible within the general concept of creating a biased junction that controls the length of the electric field gradient between the first and second contacts.
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