| 摘要 |
1530085 Semiconductor devices PHILIPS GLOEILAMPENFABRIEKEN NV 26 Aug 1977 [30 Aug 1976] 35937/77 Heading H1K A semiconductor device is made by epitaxially depositing, on a substrate 1, semiconductor layers 2-5, 7, 8 including a first GaAlAs layer 5, a contact layer 7 of GaAs, and a masking GaAlAs layer 8, locally removing the layers 2-5, 7, 8, to expose the surface 9 of the substrate 1, epitaxially depositing a second GaAlAs layer 6 differing in composition from the first GaAlAs layer 5 on the exposed surface 9, and removing the remainder of the masking GaAlAs dayer 8. The device may be a laser, a LED or a photodiode.
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