MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To lower the switching temperature from OFF to ON by injecting the uni- conducting impurity ion to the reverse conducting base region enclosed by the uni- conducting base region forming a thyristor in order to form the P-type region connecting to the uni-conducting base after the heat treatment processes are all over. CONSTITUTION:P-type emitter region 2 is provided within N-type Si substrate 1; N-type base region 4 is formed through diffusion within region 2; and theta-shaped P-type base region 3 is formed within region 4. Then N-type emitter region 5 is formed through diffusion at part within region 3 with the entire surface coated with SiO2 film 9 plus an opening drilled. And Al cathode electrode 12 and Al gate electrode 11 are attached at region 3 and 5 each, and Au anode electrode 10 is coated over the entire back surface of region 2. After this, the B<+> ion is injected into exposed region 2 through opening 13 at part of the region enclosed by region 3 with selection of the injection energy. And shallow P-type region 14 is formed there to be connected to P-type base region 3.