| 摘要 |
PURPOSE:To obtain novel MOS integrated circuit in high fusing point by a method wherein a gate wiring of high fusing point metal and a substrate Si are connected through si thin film, and another internal wiring of Al is placed thereon through a layer insulating film. CONSTITUTION:A gate electrode wiring 20 by Mo thin film is formed on a gate oxidized film 26 of a p-type Si substrate. Next, As ion is implanted and an n<+>-layer 19 is formed through annealing. The layer is covered with PSG27, and a mobile ion in Mo and SiO2 is made inactive through high temperature treatment. A hole 29 is perforated, and a P-added polycrystalline-Si 22 is formed selectively. Then as usual, a layer insulating film 28 and connection window 19 are formed, PSG is fluidized and an Al system internal wiring 21 is formed. According to this constitution, a reaction of polycrystalline-Si with Mo thin film of poly-crystal is kept on uniformly with less occurrence of stress, and the connection 22 is extremely short to exert no influence on characteristics, therefore stress is decreased all the more. No peeling thus occurs, and a multilayer wiring is applicable, therefore a degree of freedom of pattern arrangement similar to a conventional Si gate structure is obtainable. |
