| 摘要 |
PURPOSE:To obtain such film as is free from accumulation of impurities on the surface and also from abnormal field by a method wherein high energy and high output of laser beam is irradiated to the surface of a semiconductor or metal substrate in an N2 atmosphere, and the fused substrate surface is made reactive with N2 to produce a nitride film. CONSTITUTION:A laser beam 2 from a laser oscillator 1 is irradiated to the surface of an Si substrate 4 placed on a mount 5 through an optical system 3 consisting of a concave mirror 31, concave lens 32 and a convex lens 33. In this case, the laser beam 2 uses a high energy and high output of beam of several joules/cm<2>, which fuses the surface of the substrate 4 in an instant. Then, this operation is carried out in an N2 atmosphere to make the fused Si react with N2, thereby producing an Si3N4 film only on the part irradiated. The surface of the substrate 4 and the Si3N4 film is free from accumulation of impurities or abnormal development of the surface field, thus obtaining a superior film. |
