| 摘要 |
PURPOSE:To achieve high quality, by preventing foreign materials such as grinder particles and Si chips at cutting process from being invaded on the surface of protective film, by the formation of an SiO2 film on an organic color filter film as a protective film. CONSTITUTION:Taking into consideration that the heat resistance of organic color filter films 2a, 2b is around 180-200 deg.C, a surface protective coating film 8 consisting of a sputtered SiO2 film is formed on an organic color filter film 2b with a low temperature sputtering method at a temperature below the above mentioned value. In this case, the low temperature sputtering method does not rise to the temperature of 300-600 deg.C as the CVD method. Especially, when the magnetron sputtering method is used, the SiO2 film can be formed at 50-100 deg.C and no damage is given to the filter film 2b. |
