发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To obviate the output voltage difference between word line drive circuits on the basis of the voltage of a power source due to the voltage drop via wirings by supplying the voltages of two power sources to the same sides of word line drive circuits. CONSTITUTION:Many word line drive circuits WD(1)-WD(n) of a memory circuit are provided, the voltage VCC of a power source is supplied through long wirings having resistances RC(1)-RC(n-1), and the voltage VEE of a power source is similarly supplied through long wirings having resistances RE(1)- RE(n-1). In this case, the outputs for driving cell rows MS are different from each other due to the resistances RC, RE and the resistances RA, RB of the drive circuits, thereby narrowing the circuit operating range. When the VCC is fixed and the supply of the VEE is altered from a point B to a point A, DELTAVCC and DELTAVR are cancelled to one another, thereby reducing the irregularity of the voltage of the drive signal of a memory array. The difference can be completely cancelled by selecting the wiring resistances RC, RE.DELTAVCC and DELTAVCC are completely cancelled by considering the wiring width if the wirings of the same type, the difference of the output voltages between the word line drive circuits can be eliminated, thereby correctly operating the memory.
申请公布号 JPS58204563(A) 申请公布日期 1983.11.29
申请号 JP19820086616 申请日期 1982.05.24
申请人 HITACHI SEISAKUSHO KK 发明人 YAMAGUCHI KUNIHIKO;KANETANI KAZUO
分类号 G11C11/413;G11C5/06;H01L21/3205;H01L21/822;H01L21/8222;H01L23/52;H01L27/04;H01L27/06 主分类号 G11C11/413
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