| 摘要 |
In order to prevent abnormal wall charge accumulation, and thereby to prevent accidental erroneous discharges resulting from such abnormal accumulation, paths for leakage of wall charges accumulated on dielectric layers 3 are provided in dielectric layers 3 corresponding to a write electrode W1 at one end of a shift channel and a final shift electrode y2n at the other end of the shift channel. …<??>A path for leakage of wall charges may be provided by a crevice 11 in the dielectric layer 3 which extends from the surface of the dielectric layer 3 to the surface of the write electrode W1 or the surface of the final shift electrode y2n. …<??>Other means of providing such a leakage path are also disclosed. |
