| 摘要 |
<p>PURPOSE:To check leakage of minority carriers to a clad layer at a semiconductor light emitting element by a method wherein an AlGaAs barrier layer having the ratio of the mixed crystal of Al of 0.4-0.5 wherein the barrier becomes the highest against electrons is provided on the P-type clad layer side, and a layer having the ratio of the mixed crystal of Al higher than the clad layer is provided as a barrier layer on the N-type clad layer side to construct asymmetric structure. CONSTITUTION:An N-type Al0.8Ga0.2As clad layer (1mum thickness) 1, an N-type AlAs barrier layer (200Angstrom thickness) 2, an undoped AlxGa1-xAs (the value of the (x) varies from 0.5 to 0.5 according to the square distribution) GRIN layer (2,000Angstrom thickness) 3, an undoped Al0.3Ga0.7As quantum well layer (70Angstrom thickness) 4, an undoped AlxGa1-xAs (the value of the (x) varies from 0.5 to 0.8 according to the square distribution) GRIN layer (2,000Angstrom thickness) 5, a P-type Al0.45Ga0.55As barrier layer (200Angstrom thickness) 6, a P-type Al0.8Ga0.2As clad layer (1mum thickness) 7, and a P-type GaAs cap layer are grown continuously on an N-type GaAs substrate according to the MBE method. Accordingly, a semiconductor light emitting element having scantly reactive current and having high efficiency can be obtained.</p> |
