| 摘要 |
PURPOSE:To obtain a protection film without pin holes and excellent in durability, and make the protection film itself thin to get an high output power, by covering the necessary portion of an ferromagnetic thin film resistance element. CONSTITUTION:After a ferromagnetic thin film of NiCo or NiFe is formed on a glass substrate 11 by vapor deposition, a ferromagnetic thin film resistance element 12 and a terminal 13 are formed. Photosensitive polyimide resin is spread in thickness of 2mum on the whole surface, and photolithography is performed leaving a portion of the ferromagnetic thin film resistance element 12 and the terminal 13. Then SiO protection film 15 is formed by vapor deposition on the whole surface except a portion of the terminal 13. Applying solder 16, a lead wire 17 is connected to the terminal 13, and resin 18 is spread to protect the terminal. Thus a magnetic sensor is completed. As the polyimide film 14 of excellent fluidity is uniformly spread on the substrate, a protection film without pin holes can be obtained.
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