| 摘要 |
PURPOSE:To increase breakdown strength along the periphery by a method wherein a second Schottky barrier is so formed as to surround a first Schottky barrier and connection is established directly or through the intermediary of a p-n junction. CONSTITUTION:An n<->-type region 24a under the periphery of a barrier metal electrode 30 is designed to be lower in impurity concentration than an n-type region 23 so that a depletion layer is prone to extend, upon application of a reverse voltage, along the periphery of the barrier metal electrode 30 where an electric field is easier to form than in the central part of the barrier metal electrode 30. Accordingly, breakdown strength may he enhanced along the periphery. Breakdown strength may be greatly enhanced thanks to a titanium oxide thin film 29, which in turn protects responsiveness from decreasing at a high speed. This design eliminates the heat-caused instability of performance characteristics in a field plate-provided Schottky diode. |
