MANUFACTURING METHOD OF HIGH QUALITY BIPOLAR TR

摘要

The methdo for minimizing a leakage current through the neighborhood of the emitter and a leakage current by turnelling between the emitter and the extrinisc base region comprises the steps of forming a first oxide film (1) on an asctive region, forming anitride film (2) and an oxide film (3) thereon to cover the emitter region and ion-implanting thereon; forming an undercut on the nitride film (2); masking the nitride film (2) to form a field oxide film (11); removing the nitride film (2) and the pad oxide film (1) to perform a polysilicon (7) deposition, an ionimplant and a metal deposition; and forming metallic layer (10).