| 摘要 |
PURPOSE:To provide a process for forming a titanium-sapphire single crystal film useful for the relatively low-cost production of a device such as waveguide- type solid laser or waveguide-type light-amplifier which uses exclusively one surface of the substrate. CONSTITUTION:The objective process is composed of a step for forming a Ti thin film 11 on a surface of a sapphire (Al2O3) substrate 10 and a step to partially heating and melting the surface of the substrate 10 having the Ti thin film 11 in a reducing atmosphere and recrystallizing the molten part while moving the heating position. |
