发明名称 |
Method of making stack-capacitor for a dram cell |
摘要 |
There is disclosed a stacked capacitor with high capacity which ensures structural stability in a DRAM cell and a method for manufacturing the same. The stacked-capacitor is of a hollow (or cylindrical) capacitor where both ends of several polysilicon layers which form a storage electrode are connected with each other. In construction, this inventive stacked-capacitor includes: a first polysilicon layer coupled to the source region so as to extend in parallel with surface of the substrate over the left and right sides of the source region; a bridge polysilicon layer, extending in the upward direction of the substrate from both ends of the first polysilicon layer; a dielectric film formed so as to contact with the surfaces of the bridge polysilicon layer, first polysilicon layer, second polysilicon layer; and a third polysilicon layer formed so as to contact with the surface of the dielectric film.
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申请公布号 |
US5236859(A) |
申请公布日期 |
1993.08.17 |
申请号 |
US19910804384 |
申请日期 |
1991.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE, DONG-JOO;BAEK, WON-SHIK;CHOI, KYU-HYUN |
分类号 |
H01L21/8242;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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