发明名称 |
Method of manufacturing a semiconductor film and a semiconductor device by sputtering in a hydrogen atmosphere and crystallizing |
摘要 |
A method of manufacturing a semiconductor film and a semiconductor device is disclosed. The method comprises the steps of: forming a non-single crystal semiconductor film on a surface by sputtering in an atmosphere comprising hydrogen; and crystallizing the non-single crystal semiconductor film at a temperature of 450 DEG C. to 750 DEG C.
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申请公布号 |
US5236850(A) |
申请公布日期 |
1993.08.17 |
申请号 |
US19910761648 |
申请日期 |
1991.09.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG |
分类号 |
C30B29/06;C23C14/10;C23C14/34;H01L21/20;H01L21/203;H01L21/336;H01L29/786 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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