发明名称 |
SEMICONDUCTOR DEVICE. |
摘要 |
<p>PCT No. PCT/GB90/00692 Sec. 371 Date Sep. 25, 1991 Sec. 102(e) Date Sep. 25, 1991 PCT Filed May 4, 1990 PCT Pub. No. WO90/13921 PCT Pub. Date Nov. 15, 1990.An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W, Ag give digital instead of analogue switching.</p> |
申请公布号 |
EP0471737(B1) |
申请公布日期 |
1994.12.14 |
申请号 |
EP19900907320 |
申请日期 |
1990.05.04 |
申请人 |
BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY |
发明人 |
OWEN, ALAN, ERNEST;SNELL, ANTHONY, JAMES;HAJTO, JANOS;LECOMBER, PETER, GEORGE 35 MORLICH GARDENS;ROSE, MERVYN, JOHN KINGSBRIDGE |
分类号 |
H01L27/10;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;H01L45/00;(IPC1-7):H01L45/00 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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