SEPARATED REACTANTS PROCESSING OF HIGH TC SUPERCONDUCTORS
摘要
A method for forming a conductor element comprising a T1 or Hg-based high temperature superconductor (HTSC) material, comprises providing at least one first precursor material within an outer sheath for the conductor element; providing at least one second precursor material within the conductor sheath and separated from the first precursor material(s) by a barrier layer formed from a Noble metal for example between the first and second precursor materials; and heating the conductor sheath containing the precursors to a temperature at which the barrier layer melts to allow the precursor materials to mix and react, or to a temperature at which one of the precursor material(s) diffuses through the barrier layer sufficiently to allow the precursor materials to mix and react, to form the T1 or Hg-HTSC material within the outer conductor sheath.
申请公布号
WO9734328(A2)
申请公布日期
1997.09.18
申请号
WO1997NZ00029
申请日期
1997.03.13
申请人
INDUSTRIAL RESEARCH LIMITED;AMERICAN SUPERCONDUCTOR CORPORATION
发明人
POOKE, DONALD, MARK;BUCKLEY, ROBERT, GEORGE;TALLON, JEFFERY, LEWIS;STAINES, MICHAEL;OTTO, ALEXANDER