FERROELECTRIC TRANSISTOR, SEMICONDUCTOR STORAGE, AND HANDLING METHOD AND MANUFACTURE OF FERROELECTRIC TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To obtain a ferroelectric transistor and its manufacturing method wherein no failure is caused by a heat treatment. SOLUTION: In a ferroelectric transistor, a gate portion 22 is provided on a substrate 25. In the gate portion 22, a gate electrode 10, a ferroelectric film 12, and a gate insulation film 14 are laminated in this order on the substrate 25. A channel layer 20 is provided on the gate insulation film 14. On the channel layer 20, first and second main electrodes 16, 18 are provided separated from each other. The channel layer 20 is used as a channel when it is operated. That is, the carrier concentration of the channel layer 20 is controlled, utilizing the self-polarization of the ferroelectric film 12.