| 摘要 |
Tetraethoxysilane is purified by passing impure material through a gas chromatographic separating column (94, 96) at a temperature below the boiling point of the pure tetraethoxysilane. Separation of pure material from impurities occurs on the column (94, 96), and the pure material is thereafter cooled and collected in a receiver (122). The purified tetraethoxysilane has 99.999999 % purity based on metals content. |
