ESD Input protection using a floating gate neuron MOSFET as a tunable trigger element

摘要

Disclosed is a floating gate neuron MOS transistor that may be incorporated into devices such as low voltage silicon control rectifiers for protection of internal circuits against electrostatic discharge. The transistor includes two or more input gates capacitively coupled to the floating gate. By adjusting the coupling ratio of the input gates, it is possible to control the transistor drain turn-on voltage very precisely and thereby turn on the rectifier without relying on avalanche breakdown of the transistor.