| 摘要 |
A process for forming a fine contact of a high integrated semiconductor element such as a DRAM, a SRAM, or an ASIC which requires a fine pattern is disclosed. In the process, a first insulating film(7), a second insulating film(8), and a polysilicon film(9) are sequentially deposited at an upper portion of a wafer. A mask pattern of a sensitive film(20) is formed at an upper portion of polysilicon film(9). Polysilicon film(9) and second insulating film(8) are sequentially dry etched. A portion of first insulating film(8) is etched. Sensitive film(20) is removed. A space polysilicon film(10) is formed at a side wall of portions in which first insulating film(7), second insulating film(8), and polysilicon film(9) are etched. Material on a desired contact portion(6A,6B) is etched by using space polysilicon film(10) as a mask to form contact holes(22,23).
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