METHOD FOR MANUFACTURING SEMICONDUCTOR CAPACITOR

摘要

PURPOSE: A method for manufacturing a semiconductor capacitor is provided to improve the productivity of the semiconductor capacitor by performing an etching process for forming a storage electrode pattern in a single step. CONSTITUTION: A storage electrode material layer for forming a storage electrode(34) is formed on an insulating layer of a semiconductor substrate. The semiconductor substrate is formed with a contact hole(32). A photoresist etching mask is formed on the storage electrode material layer so as to form the storage electrode(34). A wafer formed with the etching mask is loaded in a low pressure high density plasma etching device. Then, the storage electrode material layer is selectively etched so as to form the storage electrode(34). At this time, the etching condition is that the pressure is 15mT, an upper electrode power is 600W, a lower electrode power is 50W, Cl2 40 SCCM, N2 6 SCCM, and SF6 7 SCCM.