| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve practicability even at low applied voltage by setting vapor depositing energy of an ion beam in a specific range and depositing it in an ion beam vapor depositing method. SOLUTION: During formation of an amorphous carbon film, a predetermined voltage is applied to each part to generate positive Cs ions from a Cs plasma ion source 8, negative ions are taken out with negative ion taking electrode 12 through a suppressor 9 to generate negative ion beams 17. These are converged through a lens 13. Next, an electron removing body 15 removes electrons contained in the negative ion beams 17, a deflection plate 16 flies only negative ions toward Al made negative plate 2, the amorphous carbon film is formed on the surface of the negative plate 2 in an ion beam vapor depositing method. Depositing energy E of the ion beam used here is set as 150 eV<=E<=1000 eV for suppressing electric insulation of the amorphous carbon film 3, expecting electric field effect to a film surface, forming an ion injection layer on the amorphous carbon film 3, and preventing disturbance of release of electric field from the film.</p> |
