| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to simplify a fabrication step by making an element isolation without forming a trench-type field oxide layer, reduces a sheet resistance of impurity diffusion area, and reduces a contact resistance by increasing an interface between a plug and an active area. CONSTITUTION: A first insulation layer and an etching stoppage layer are sequentially formed on a semiconductor substrate. The etching stoppage layer and the first insulation layer are partially etched to form a window for exposing a surface of a predetermined part of the substrate. An active layer(33) is formed to be higher than a residual etching stoppage layer on the exposed substrate. A gate insulation layer(34), a gate(35) and an impurity diffusion area(37) are included in a transistor, and the transistor is formed on the active layer. A second insulation layer is formed on the substrate. A predetermined part of the second insulation layer is removed to expose some part of the impurity diffusion area and some part of the etching stoppage layer at the same time, A plug as of a conductive material is formed, and fills the contact hole. Thereby, the fabrication process is simplified by an element isolation without forming a trench-type field oxide layer, a sheet resistance is reduced by an increased impurity diffusion area, a contact resistance is reduced by increasing an interface between the plug and the active area.
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