GRAPHITE CRUCIBLE FOR SILICON SINGLE CRYSTAL GROWTH BY CZOCHRZLSKI METHOD

摘要

PURPOSE: A boron nitride(BN)-coated graphite crucible for growing silicon single crystal by Czochralski method is provided to prevent corrosion caused by SiOx gas or SiO2 crucible so that it has a long lifetime. CONSTITUTION: The BN-coated graphite crucible is produced by coating the joining part, especially the radius curvature changes, of a graphite crucible(3) with BN, not reacting with an SiO2 crucible(2) or SiOx gas.