发明名称 Method of fabricating an air bridge
摘要 A protective pattern is formed on a semiconductor substrate in a shape covering a circuit region and exposing an air bridge connecting portion, a metallic film and an insulating film are formed to cover the protective pattern, the metallic film and the insulating film are patterned to form air bridge wiring and an air bridge protective film covering the air bridge wiring, and thereafter, the protective pattern is removed to form a hollow between the air bridge wiring and the circuit region.
申请公布号 US6806181(B2) 申请公布日期 2004.10.19
申请号 US20020100061 申请日期 2002.03.19
申请人 FUJITSU QUANTUM DEVICES LIMITED 发明人 SAKAMOTO KAZUYUKI
分类号 H01L21/338;H01L21/768;H01L23/482;H01L23/522;H01L29/812;(IPC1-7):H01L21/476;H01L21/44 主分类号 H01L21/338
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