发明名称 |
Method and apparatus for suppressing the channeling effect in high energy deep well implantation |
摘要 |
The invention provides an improved well structure for electrically separating n-channel and p-channel MOSFETs. The invention first forms a shallow well in a substrate. A buried amorphous layer is then formed below the shallow well. A deep well is then formed below the buried amorphous layer. The substrate is then subjected to a rapid thermal anneal to recrystallize the buried amorphous layer. The well structure is formed by the shallow well and the deep well. A conventional semiconductor device may then be formed above the well structure. The buried amorphous layer suppresses the channeling effect during the forming of the deep well without requiring a tilt angle.
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申请公布号 |
US6806147(B1) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020211190 |
申请日期 |
2002.08.01 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YU BIN;NG CHE-HOO |
分类号 |
H01L21/265;H01L21/8238;H01L27/092;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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