发明名称 |
Method for supplying CZ material |
摘要 |
Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. Above the initially charged poly-silicon raw material, a heat resistant tubular container is placed. The granules/lumps poly-silicon raw material for use in additional charging is charged inot the tubular container. The poly-silicon raw material initially charged into the crucible is melted. The poly-silicon raw material in the tubular container gradually and spontaneously comes down into the crucible, as the bulk of poly-silicon raw material is decreased according to the melting of the initially charged raw material.
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申请公布号 |
US6805746(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20020188368 |
申请日期 |
2002.07.03 |
申请人 |
SUMITOMO MITSUBISHI SILICON CORPORATION |
发明人 |
MOROISHI MANABU;TAKENAKA KENICHI |
分类号 |
C30B15/02;C30B29/06;(IPC1-7):C30B15/02 |
主分类号 |
C30B15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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