发明名称 Method for supplying CZ material
摘要 Granules/lumps poly-silicon raw material, low in raw material cost and free of the hazard of crack is additionally charged into a crucible in a safe and steady manner. In a single crystal growth according to the CZ method, poly-silicon raw material ins initially charged into a crucible. Above the initially charged poly-silicon raw material, a heat resistant tubular container is placed. The granules/lumps poly-silicon raw material for use in additional charging is charged inot the tubular container. The poly-silicon raw material initially charged into the crucible is melted. The poly-silicon raw material in the tubular container gradually and spontaneously comes down into the crucible, as the bulk of poly-silicon raw material is decreased according to the melting of the initially charged raw material.
申请公布号 US6805746(B2) 申请公布日期 2004.10.19
申请号 US20020188368 申请日期 2002.07.03
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION 发明人 MOROISHI MANABU;TAKENAKA KENICHI
分类号 C30B15/02;C30B29/06;(IPC1-7):C30B15/02 主分类号 C30B15/02
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