发明名称 |
Source side self boosting technique for non-volatile memory |
摘要 |
A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the NAND string during the programming process. One exemplar implementation includes applying a voltage (e.g. Vdd) to the source contact and turning on the source side select transistor for the NAND sting corresponding to the cell being inhibited. Another implementation includes applying a pre-charging voltage to the unselected word lines of the NAND string corresponding to the cell being inhibited prior to applying the program voltage.
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申请公布号 |
US6859397(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20030379608 |
申请日期 |
2003.03.05 |
申请人 |
SANDISK CORPORATION |
发明人 |
LUTZE JEFFREY W.;CHEN JIAN;LI YAN;HIGASHITANI MASAAKI |
分类号 |
G11C11/34;G11C11/56;G11C16/04;G11C16/10;G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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