发明名称 |
PHOTORESIST COMPOSITION FOR DEEP UV RADIATION CONTAINING AN ADDITIVE |
摘要 |
<p>The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.</p> |
申请公布号 |
EP1444551(B1) |
申请公布日期 |
2005.07.06 |
申请号 |
EP20020787514 |
申请日期 |
2002.10.25 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
KUDO, TAKANORI;DAMMEL, RALPH, R.;PADMANABAN, MUNIRATHNA |
分类号 |
G03F7/039;G03F7/004;G03F7/033;G03F7/40;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|