发明名称 Process for producing an integrated electronic circuit that includes a capacitor
摘要 A process for producing an integrated electronic circuit that includes a capacitor comprises the formation of a stack on top of a substrate ( 100, 101 ). The stack comprises a first volume of a temporary material, a second volume ( 2 ) of at least one insulating dielectric and a third volume ( 3 ) of a first electrically conducting material. After a coating material ( 4 ) has been deposited on the stack, the temporary material is removed via access shafts (C 1 , C 2 ) that are formed between a surface (S) of the circuit and the first volume. The temporary material is then replaced with a second, electrically conducting material.
申请公布号 US7033887(B2) 申请公布日期 2006.04.25
申请号 US20040850042 申请日期 2004.05.20
申请人 STMICROELECTRONICS SA 发明人 DELPECH PHILIPPE;REGNIER CHRISTOPHE;CREMER SEBASTIEN
分类号 H01L21/8242;H01L21/02;H01L29/92 主分类号 H01L21/8242
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