摘要 |
A process for producing an integrated electronic circuit that includes a capacitor comprises the formation of a stack on top of a substrate ( 100, 101 ). The stack comprises a first volume of a temporary material, a second volume ( 2 ) of at least one insulating dielectric and a third volume ( 3 ) of a first electrically conducting material. After a coating material ( 4 ) has been deposited on the stack, the temporary material is removed via access shafts (C 1 , C 2 ) that are formed between a surface (S) of the circuit and the first volume. The temporary material is then replaced with a second, electrically conducting material.
|