发明名称 Programmable solid state lithography mask
摘要 This invention relates to electrically programmable photolithography masks and to structures fabricated by such masks. An electrically programmable photolithography mask with memory to retain a programmed pattern after programming, the mask comprising: a single, photolithographic mask plate to provide a mechanical support for said mask; an array of pixels each pixel comprising an electrically programmable solid-state electro-opaque structure fabricated on said mask plate; a plurality of row electrodes; a plurality of column electrodes; said row and column electrodes defining said pixels and being configured for addressing individual said electro-opaque pixels for programming said mask to define a pattern of optical modulation by the mask; and a thin film protective covering layer over at least said array of electro-opaque pixels.
申请公布号 GB2431732(A) 申请公布日期 2007.05.02
申请号 GB20050022149 申请日期 2005.10.31
申请人 NANCY ELLEN JOHNSON LUMPKIN 发明人 NANCY ELLEN JOHNSON LUMPKIN
分类号 G03F9/00 主分类号 G03F9/00
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