发明名称 Surface acoustic wave device
摘要 A surface acoustic wave device includes a piezoelectric substrate made of LiNbO<SUB>3 </SUB>having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.
申请公布号 US2007096592(A1) 申请公布日期 2007.05.03
申请号 US20040595237 申请日期 2004.08.06
申请人 KADOTA MICHIO;NAKAO TAKESHI 发明人 KADOTA MICHIO;NAKAO TAKESHI
分类号 H03H9/25;H03H3/08;H03H9/02 主分类号 H03H9/25
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