METHOD FOR FORMING ISOLATION OF SEMICONDUCTOR DEVICE

摘要

A method for forming an isolation layer in a semiconductor device is provided to reduce a device failure and to prevent the damage of an SOD(Spin On Dielectric) by preventing void generation in the isolation layer and not exposing the SOD at a subsequent process. A semiconductor substrate(10) having a trench for isolation is provided. A first dielectric(14) is formed on the whole surface including the trench. An SOD(15) is formed on the entire surface to gap-fill the trench. The SOD is planarized to expose the semiconductor substrate. The SOD is etched in a preset thickness to expose the upper portion of the trench. A second dielectric(16) is formed on the entire surface including the trench. The first and second dielectrics are formed with an HDP(high Density Plasma) oxide layer.