| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent formation of a scum and to secure an ion implantation mask margin of a storage node contact node portion by using a negative photoresist layer. Plural gate patterns(33) are formed on the upper portion of a semiconductor substrate(31). A first junction region(101) and a second junction region(100) are formed on the semiconductor substrate between the gate patterns. A negative photoresist layer(34) is applied on the upper portion of the gate pattern. An exposing process is performed on the negative photoresist layer. The non-exposing part in the negative photoresist layer is selectively developed to open the second junction region between the gate patterns. An additional ion implantation is performed on the second junction region by using the negative photoresist layer remaining after developing as an ion implantation barrier to form an asymmetric junction structure.
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