发明名称 Flash memory system and data writing method thereof
摘要 Provided are a flash memory system and a data writing method thereof, the method including (a) transmitting a predetermined command and an address signal to a flash memory device included in the flash memory system, (b) transmitting data to the flash memory device, and (c) generating a parity code for the data and transmitting the parity code to the flash memory device, where the steps (b) and (c) are repeated twice or more; and where the data and the corresponding parity codes are written in a page buffer of the flash memory device irrespective of a data field and a spare field.
申请公布号 US7290082(B2) 申请公布日期 2007.10.30
申请号 US20040869022 申请日期 2004.06.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON JEONG-MI
分类号 G06F12/00;G06F11/10;G11C7/10;G11C16/10 主分类号 G06F12/00
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