发明名称 |
Memory devices and methods of operation thereof using interdependent sense amplifier control |
摘要 |
A memory device includes a control circuit configured to disable a local input/output line sense amplifier responsive to a global input/output line sense amplifier enable signal. The device may further include a column select gate configured to control transfer of data from a memory cell to the local input/output line and the control circuit may be configured to disable transfer of data via the column select gate responsive to the global input/output line sense amplifier enable signal.
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申请公布号 |
US7289379(B2) |
申请公布日期 |
2007.10.30 |
申请号 |
US20060327877 |
申请日期 |
2006.01.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOL HYE-IN;KYUNG KYE-HYUN |
分类号 |
G11C7/22;G11C7/06;G11C7/08;G11C8/02 |
主分类号 |
G11C7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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