| 摘要 |
<p>A semiconductor device wherein the layer of highly doped p-type material (2) typically found in devices of the prior art is replaced with a layer of highly doped n-type material (11) and a thin layer of highly doped p-type material (2) thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.</p> |
