| 摘要 |
<p>The monolithically integrated device according to this invention comprises a first substrate (SUB) and, at least in a portion: a) a first structure (ST1) of a first material in solid form suitable to absorb hydrogen with ensuing generation of thermal energy, superposed to said substrate (SUB); b) a second structure (ST2) of a second material in solid form suitable to release hydrogen when it reaches a temperature higher than a prefixed temperature, superposed to said substrate (SUB); c) a third structure (ST3) of a third material in solid form suitable to generate thermal energy when it is submitted to the passage of electric current, so placed as to be thermally coupled at least to said second structure (ST2); wherein said first structure (ST1) and said second structure (ST2) are in contact, at least partly, with one another.</p> |
