| 摘要 |
A nitride semiconductor light emitting diode suppressing the diffusion of current and leakage current is provided to form the quantum dot seed with good quality. A nitride semiconductor light emitting diode(100) comprises a crystal substrate layer(110), a first active layer(120), a second active region(130), and a p-type semiconductor layer(140). The first active layer is a kind of nano-rods layer. And the crystal substrate layer is the material of the nitride series. The nano-rod is positioned at the active layer and n-type semiconductor layer (or the crystal substrate layer) or the center of the active layer in order to improve the environment that the quantum dot can be formed. The nano-rod is positioned between the p-type semiconductor layer and the active layer and the emission area widens.
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