发明名称 |
Surface acoustic wave element, surface acoustic wave device, surface acoustic wave duplexer, and method of manufacturing surface acoustic wave element |
摘要 |
A surface acoustic wave element (12) includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode (18) composed of monocrystal aluminum. In this surface acoustic wave element (12), segregation of Cu or the like occurs in the thin film electrode (18). Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate (28) during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate (28) is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element (12). <IMAGE> |
申请公布号 |
EP1499019(B1) |
申请公布日期 |
2009.06.17 |
申请号 |
EP20040016751 |
申请日期 |
2004.07.15 |
申请人 |
TDK CORPORATION |
发明人 |
NAKANO, MASAHIRO;SOBU, MASAKI;OHTSUKA, SHIGEKI;KAGAYA, YASUNAGA |
分类号 |
H03H3/08;H03H9/145;H03H9/02;H03H9/10;H03H9/64;H03H9/72 |
主分类号 |
H03H3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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