发明名称 Moveable and adjustable gas injectors for an etching chamber
摘要 An apparatus for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing, comprising a plurality of gas injectors for admitting a processing gas into an etching chamber. Each gas injector of the plurality of gas injectors is disposed along a track within the etching chamber and moveable along the track. Further, each gas injector is coupled with a throttling valve or nozzle to permit adjustment of processing gas flow rate. A method for increasing the uniformity in a critical dimension of chemical vapor deposition and etching during substrate processing includes performing a chemical deposition or etch using the plurality of moveable and adjustable gas injectors and measuring the critical dimension uniformity. Adjustments to the location of at least one gas injector or the processing gas flow rate to at least one gas injector are made to increase critical dimension uniformity.
申请公布号 US9373551(B2) 申请公布日期 2016.06.21
申请号 US201314089783 申请日期 2013.11.26
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Lu Tzung-Shiun;Chen Chun-Lang;Yang Shih-Hao;Chang Jong-Yuh
分类号 H01J37/32;C23C16/455;H01L21/66 主分类号 H01J37/32
代理机构 Duane Morris LLP 代理人 Duane Morris LLP
主权项 1. An apparatus for delivering a processing gas to a substrate, comprising: an etching chamber; and a circular gas injector module disposed within the etching chamber comprising an inner track, an outer track, and a plurality of gas injectors for admitting the processing gas into the etching chamber, each gas injector independently moveable between said inner track and said outer track.
地址 Hsin-Chu TW