| 发明名称 |
BIPOLAR TRANSISTOR WITH CARBON ALLOYED CONTACTS |
| 摘要 |
A method for forming a bipolar junction transistor includes forming a collector intrinsic region, an emitter intrinsic region and an intrinsic base region between the collector intrinsic region and the emitter intrinsic region. A collector extrinsic contact region is formed in direct contact with the collector intrinsic region; an emitter extrinsic contact region is formed on the emitter intrinsic region and a base extrinsic contact region is formed in direct contact with the intrinsic base region. Carbon is introduced into at least one of the collector extrinsic contact region, the emitter extrinsic contact region and the base extrinsic contact region to suppress diffusion of dopants into the junction region. |
| 申请公布号 |
US2016204234(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201615074633 |
申请日期 |
2016.03.18 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAN KEVIN K.;HEKMATSHOARTABARI BAHMAN;NING TAK H. |
| 分类号 |
H01L29/735;H01L29/10;H01L29/167;H01L29/08 |
主分类号 |
H01L29/735 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bipolar transistor device, comprising:
a collector intrinsic region, an emitter intrinsic region and an intrinsic base region formed between the collector intrinsic region and the emitter intrinsic region; a collector extrinsic contact region formed in contact with the collector intrinsic region; an emitter extrinsic contact region formed in contact with the emitter intrinsic region; a base extrinsic contact region formed in contact with the intrinsic base region; and carbon introduced into at least one of the collector extrinsic contact region, the emitter extrinsic contact region and the base extrinsic contact region to suppress diffusion of dopants into the intrinsic base region. |
| 地址 |
Armonk NY US |
