SEMICONDUCTOR STRUCTURE COMPRISING AN ALUMINUM GATE ELECTRODE PORTION AND METHOD FOR THE FORMATION THEREOF

摘要

An illustrative method includes providing a semiconductor structure. The semiconductor structure includes an active region and an electrically insulating structure. The active region includes a source region, a channel region and a drain region. The electrically insulating structure includes a recess over the channel region. A work function adjustment layer is deposited over the semiconductor structure. A portion of the work function adjustment layer is deposited at a bottom surface of the recess. The work function adjustment layer includes at least one material other than titanium nitride. A titanium nitride pre-wetting layer is deposited over the work function adjustment layer. A titanium wetting layer is deposited directly on the titanium nitride pre-wetting layer. After the deposition of the titanium wetting layer, the recess is filled with aluminum.

主权项

1. A method, comprising:
providing a semiconductor structure, said semiconductor structure comprising an active region and an electrically insulating structure, said active region comprising a source region, a channel region and a drain region, said electrically insulating structure comprising a recess over said channel region; depositing a work function adjustment layer over said semiconductor structure, a portion of said work function adjustment layer being deposited at a bottom surface of said recess, said work function adjustment layer comprising at least one material other than titanium nitride; depositing a titanium nitride pre-wetting layer over said work function adjustment layer; depositing a titanium wetting layer directly on said titanium nitride pre-wetting layer; and after the deposition of said titanium wetting layer, filling said recess with aluminum.